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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Huai Yu

USPTO Granted Patents = 16 

Average Co-Inventor Count = 8.2

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal15 out of 33 
 
Sino-american Silicon Products Inc.
 patents
silverMedal1 out of 1 
 
Sino-american Sulicon Products Inc.
 patent

Years Active: 2015-2020

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16 patents (USPTO):Explore Patents
1. 10825940 - Polycrystalline silicon column and polycrystalline silicon wafer (2020-11-03),
2. 10510830 - N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer (2019-12-17),
3. 10297702 - Polycrystalline silicon column and polycrystalline silicon wafer (2019-05-21),
4. 10138572 - Crystalline silicon ingot and method of fabricating the same (2018-11-27),
5. 10087080 - Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles (2018-10-02),
6. 10065863 - Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom (2018-09-04),
7. 10029919 - Multicrystalline silicon brick and silicon wafer therefrom (2018-07-24),
8. 9903043 - Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assembly (2018-02-27),
9. 9885125 - Method for manufacturing isolating layer onto crucible and spraying device related thereto (2018-02-06),
10. 9637391 - Crystalline silicon ingot including nucleation promotion layer (2017-05-02),
11. 9493357 - Method of fabricating crystalline silicon ingot including nucleation promotion layer (2016-11-15),
12. 9337375 - Seed used for crystalline silicon ingot casting (2016-05-10),
13. 9315918 - Crystalline silicon ingot and method of fabricating the same (2016-04-19),
14. 9163326 - Crystal growth device (2015-10-20),
15. 9133565 - Crystalline silicon ingot and method of fabricating the same (2015-09-15),

Title: Innovations of Inventor Wen-Huai Yu

Introduction

Wen-Huai Yu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of materials science, particularly in the development of polycrystalline silicon products. With a total of 16 patents to his name, his work has had a substantial impact on the semiconductor industry.

Latest Patents

Wen-Huai Yu's latest patents include innovations such as a polycrystalline silicon column and a polycrystalline silicon wafer. The polycrystalline silicon wafer features a plurality of silicon grains, with a carbon content greater than 4 ppma and a resistivity of at least 1.55 Ω-cm. Additionally, he has developed an N-type polysilicon crystal, along with its manufacturing method and an N-type polysilicon wafer. This N-type polysilicon crystal exhibits a slope of resistivity and a slope of defect area percentage, demonstrating advanced properties that enhance its performance in various applications.

Career Highlights

Throughout his career, Wen-Huai Yu has worked with notable companies such as Sino-American Silicon Products Inc. and Sino-American Silicon Products Inc. His expertise in silicon materials has positioned him as a key figure in the industry, driving forward innovations that meet the demands of modern technology.

Collaborations

Wen-Huai Yu has collaborated with several professionals in his field, including Wen-Ching Hsu and Yu-Min Yang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in silicon technology.

Conclusion

Wen-Huai Yu's contributions to the field of polycrystalline silicon have established him as a leading inventor in the industry. His innovative patents and collaborations continue to influence the development of advanced materials for various applications.

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