The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Dec. 23, 2013
Applicant:

Sino-american Silicon Products Inc., Hsinchu, TW;

Inventors:

Hung-Sheng Chou, Hsinchu, TW;

Yu-Tsung Chiang, Hsinchu, TW;

Yu-Min Yang, Hsinchu, TW;

Ming-Kung Hsiao, Hsinchu, TW;

Wen-Huai Yu, Hsinchu, TW;

Sung-Lin Hsu, Hsinchu, TW;

I-Ching Li, Hsinchu, TW;

Chung-Wen Lan, Hsinchu, TW;

Wen-Ching Hsu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11); Y10T 428/2991 (2015.01); Y10T 428/2993 (2015.01);
Abstract

The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.


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