Hsinchu, Taiwan

Sung-Lin Hsu

USPTO Granted Patents = 14 


Average Co-Inventor Count = 6.8

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Zhubei, TW (2015)
  • Hsinchu, TW (1994 - 2022)

Company Filing History:


Years Active: 1994-2022

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14 patents (USPTO):Explore Patents

Title: The Innovations of Sung-Lin Hsu

Introduction

Sung-Lin Hsu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of materials science and engineering, holding a total of 14 patents. His work focuses on innovative methods and materials that enhance the performance and efficiency of various technologies.

Latest Patents

Among his latest patents is a groundbreaking method for forming an isolating layer of a crucible. This method involves placing a round crucible sideways and performing a series of spraying processes to create the isolating layer on both the bottom and wall surfaces. Each spraying process is meticulously aligned and executed to ensure complete coverage of the crucible. Another notable patent involves the development of an N-type polysilicon crystal and its manufacturing method. This invention addresses the resistivity and defect area percentage of the polysilicon crystal, providing valuable insights for the production of N-type polysilicon wafers.

Career Highlights

Sung-Lin Hsu has worked with notable organizations such as Sino-American Silicon Products Inc. and the National Science Council. His experience in these institutions has allowed him to collaborate with leading experts in the field, further enhancing his innovative capabilities.

Collaborations

Some of his notable coworkers include Wen-Ching Hsu and Wen-Huai Yu. Their collaborative efforts have contributed to the advancement of technology in the materials science sector.

Conclusion

Sung-Lin Hsu's contributions to innovation and technology are evident through his numerous patents and collaborations. His work continues to influence the field of materials science, paving the way for future advancements.

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