The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Apr. 29, 2011
Chung-wen Lan, Xindian, TW;
Ya-lu Tsai, Taoyuan County, TW;
Sung-lin Hsu, Zhubei, TW;
Chao-kun Hsieh, Xinfeng County, TW;
Wen-chieh Lan, Keelung, TW;
Wen-ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Xindian, TW;
Ya-Lu Tsai, Taoyuan County, TW;
Sung-Lin Hsu, Zhubei, TW;
Chao-Kun Hsieh, Xinfeng County, TW;
Wen-Chieh Lan, Keelung, TW;
Wen-Ching Hsu, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.