The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 09, 2012
Sung-lin Hsu, Hsinchu, TW;
Cheng-jui Yang, Hsinchu, TW;
Pei-kai Huang, Hsinchu, TW;
Sheng-hua NI, Hsinchu, TW;
Yu-min Yang, Hsinchu, TW;
Ming-kung Hsiao, Hsinchu, TW;
Wen-huai Yu, Hsinchu, TW;
Ching-shan Lin, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Chung-wen Lan, Hsinchu, TW;
Sung-Lin Hsu, Hsinchu, TW;
Cheng-Jui Yang, Hsinchu, TW;
Pei-Kai Huang, Hsinchu, TW;
Sheng-Hua Ni, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Ming-Kung Hsiao, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Ching-Shan Lin, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.