Pei-Kai Huang

Title: Pei-Kai Huang: Innovator in Crystalline Silicon Technology

Introduction

Pei-Kai Huang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of crystalline silicon technology, holding a total of 2 patents. His work focuses on the fabrication methods of crystalline silicon ingots, which are essential in various technological applications.

Latest Patents

Huang's latest patent is titled "Crystalline silicon ingot and method of fabricating the same." This invention discloses a crystalline silicon ingot that includes multiple silicon crystal grains growing in a vertical direction. The ingot features a bottom section with a silicon crystal grain that has a first average crystal grain size of less than about 12 mm. Additionally, the upper portion of the ingot, located approximately 250 mm from the bottom, contains a silicon crystal grain with a second average crystal grain size greater than about 14 mm. This innovative approach enhances the quality and efficiency of silicon ingot production.

Career Highlights

Pei-Kai Huang is currently employed at Sino-American Silicon Products Inc., where he continues to advance his research and development efforts in silicon technology. His expertise and innovative mindset have positioned him as a key player in the industry.

Collaborations

Huang collaborates with talented colleagues, including Sung-Lin Hsu and Cheng-Jui Yang, who contribute to the success of their projects and innovations.

Conclusion

Pei-Kai Huang's contributions to crystalline silicon technology exemplify the impact of innovative thinking in the field. His patents and ongoing work at Sino-American Silicon Products Inc. highlight his commitment to advancing technology and improving manufacturing processes.