Ming-Kung Hsiao

Title: The Innovations of Ming-Kung Hsiao

Introduction

Ming-Kung Hsiao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of silicon products, holding a total of five patents. His work focuses on enhancing the properties of polycrystalline silicon, which is crucial for various applications in the semiconductor industry.

Latest Patents

Ming-Kung Hsiao's latest patents include innovations related to polycrystalline silicon columns and wafers. One of his patents describes a polycrystalline silicon wafer that contains a plurality of silicon grains. This wafer has a carbon content greater than 4 parts per million atomic (ppma) and a resistivity of at least 1.55 ohm-centimeter. Another patent details a polycrystalline silicon column that features silicon grains grown along a specific crystal-growing direction. In this column, the average grain size and resistivity exhibit opposite trends, while the average grain size and oxygen content show opposite variations. Additionally, the average defect area ratio of the column is maintained at less than or equal to 2.5%.

Career Highlights

Ming-Kung Hsiao is currently employed at Sino-American Silicon Products Inc., where he continues to innovate in the field of silicon technology. His work has been instrumental in advancing the quality and efficiency of silicon products used in various applications.

Collaborations

Ming-Kung Hsiao collaborates with notable colleagues, including Yu-Min Yang and Wen-Huai Yu. Their combined expertise contributes to the ongoing development of cutting-edge silicon technologies.

Conclusion

Ming-Kung Hsiao's contributions to the field of polycrystalline silicon have established him as a key figure in the industry. His innovative patents and collaborative efforts continue to drive advancements in silicon technology.