Sino-american Silicon Products Inc.

Ming-Kung Hsiao

Wen-Ching Hsu

Wen-Huai Yu

Yu-Min Yang

Cheng-Jui Yang

I-Ching Li

Chung-Wen Lan

Sung-Lin Hsu

Ching-Shan Lin

Bo-Kai Wang

Sung Lin Hsu

Kuo-Wei Chuang

Yuan Hsiao Chang

Huang Wei Lin

Pei-Kai Huang

Sheng-Hua Ni

Yu-Tsung Chiang

Hung-Sheng Chou

A polycrystalline silicon wafer is provided. The polycrystalline silicon wafer, includes a plurality of silicon grains, wherein the carbon content of the polycrystalline silicon wafer is greater than 4 ppma, and the resistivity of the polycrystalline silicon wafer is greater than or equal to 1.55 &#x3a9;-cm.

Polycrystalline silicon column and polycrystalline silicon wafer

A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

Crystalline silicon ingot and method of fabricating the same

The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Seed used for crystalline silicon ingot casting

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Hsinchu, Taiwan

Ming-Kung Hsiao