The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Aug. 26, 2016
Sino-american Silicon Products Inc., Hsinchu, TW;
Cheng-Jui Yang, Hsinchu, TW;
Huang Wei Lin, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Kuo-Wei Chuang, Hsinchu, TW;
Ming-Kung Hsiao, Hsinchu, TW;
Yuan Hsiao Chang, Hsinchu, TW;
Bo-Kai Wang, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Sung Lin Hsu, Hsinchu, TW;
I-Ching Li, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu Science Park, TW;
Abstract
A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.