Company Filing History:
Years Active: 2019-2020
Title: Innovations of Yuan Hsiao Chang in Polycrystalline Silicon Technology
Introduction
Yuan Hsiao Chang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of silicon technology, particularly in the development of polycrystalline silicon materials. With a total of two patents to his name, his work has implications for various applications in the semiconductor industry.
Latest Patents
Yuan Hsiao Chang's latest patents include innovations in polycrystalline silicon columns and wafers. The first patent describes a polycrystalline silicon wafer that contains a plurality of silicon grains. This wafer is characterized by a carbon content greater than 4 ppma and a resistivity of at least 1.55 Ω-cm. The second patent focuses on a polycrystalline silicon column, which also consists of multiple silicon grains grown along a specific crystal-growing direction. In this column, the average grain size of the silicon grains and the resistivity exhibit opposite trends, while the average grain size and the oxygen content show opposite variations as well. Notably, the overall average defect area ratio of the polycrystalline silicon column is maintained at less than or equal to 2.5%.
Career Highlights
Yuan Hsiao Chang is currently employed at Sino-American Silicon Products Inc., where he continues to advance his research and development efforts. His work has positioned him as a key figure in the innovation of silicon products, contributing to the efficiency and performance of semiconductor materials.
Collaborations
Yuan has collaborated with several colleagues, including Cheng-Jui Yang and Huang Wei Lin. These partnerships have fostered a collaborative environment that enhances the innovation process within the company.
Conclusion
Yuan Hsiao Chang's contributions to polycrystalline silicon technology reflect his expertise and commitment to innovation in the semiconductor industry. His patents not only advance the field but also pave the way for future developments in silicon materials.