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For the Inventor, By the Inventor

Hsinchu, Taiwan

I-Ching Li

This inventor holds 18 USPTO granted patents and 7 published patent applications, primarily in Silicon Crystal Growth. Top assignees: Globalwafers Co., Ltd., Sino-American Silicon Products Inc., Globalwafers Co., Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: I-Ching Li. Retrieved from https://idiyas.com/inventor/i-ching-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 77.8

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal13 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal3 out of 33 
 
Sino-American Silicon Products Inc.
 patents
bronzeMedal1 out of 28 
 
Globalwafers Co., Ltd.
 patents
4. 1 out of 1 
 
Mradian Femto Sources Co., Ltd.
 patent
5. 1 out of 1 
 
Sino-American Sulicon Products Inc.
 patent
where one patent can have more than one assignee

Years Active: 2016-2026

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Areas of Expertise:
Single Crystal Growth
Wafer Inspection
Defect Analysis
Mono-Crystalline Silicon
Silicon Carbide
Material Analysis
Dust Collection
Crucible Assembly
Thermal Insulation
Ingot Casting
Polycrystalline Silicon
Crystal Growth Apparatus
18 patents (USPTO):Explore Patents
1. 12594630 - Amorphous phase modification apparatus and processing method of single crystal material (2026-04-07),
2. 12076677 - Method for collecting dust from single crystal growth system (2024-09-03),
3. 12044631 - Wafer surface defect inspection method and apparatus thereof (2024-07-23),
4. 11923422 - Semiconductor device (2024-03-05),
5. 11859965 - Material analysis method (2024-01-02),
6. 11852465 - Wafer inspection method and apparatus thereof (2023-12-26),
7. 11845030 - Method for collecting dust from single crystal growth system and dust collecting system thereof (2023-12-19),
8. 11708642 - Mono-crystalline silicon growth apparatus (2023-07-25),
9. 11377752 - Mono-crystalline silicon growth method (2022-07-05),
10. 11326272 - Mono-crystalline silicon growth apparatus (2022-05-10),
11. 11041255 - Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10∧7 Ohm-cm and manufacturing method therefor (2021-06-22),
12. 10825940 - Polycrystalline silicon column and polycrystalline silicon wafer (2020-11-03),
13. 10347481 - Silicon carbide wafer and method for production thereof (2019-07-09),
14. 10297702 - Polycrystalline silicon column and polycrystalline silicon wafer (2019-05-21),
15. 10053797 - Crystal growth apparatus and thermal insulation cover of the same (2018-08-21),

Title: The Innovative Journey of Inventor I-Ching Li

Introduction:

I-Ching Li, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

I-Ching Li's most recent patents focus on advancements in semiconductor technology, particularly in the development of next-generation microchips with enhanced processing capabilities.

Career Highlights:

With a career spanning over two decades, I-Ching Li has held key positions in leading tech companies, where he spearheaded research and development projects that have led to numerous successful patent applications.

Collaborations:

Throughout his career, I-Ching Li has collaborated with top researchers, engineers, and scientists from renowned institutions and companies worldwide, fostering a culture of innovation and excellence in all his projects.

Conclusion:

Inventor I-Ching Li's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary in the field, with a lasting impact on the industry as a whole.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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