The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Jan. 13, 2022
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Shang-Chi Wang, Hsinchu, TW;

Miao-Pei Chen, Hsinchu, TW;

Han-Zong Wu, Hsinchu, TW;

Chia-Chi Tsai, Hsinchu, TW;

I-Ching Li, Hsinchu, TW;

Assignee:

GlobalWafers Co., Ltd., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01B 11/30 (2006.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01B 11/30 (2013.01); G01B 11/303 (2013.01); G01B 11/306 (2013.01); G01N 21/8851 (2013.01); G01N 2021/8861 (2013.01); G01N 2021/8887 (2013.01);
Abstract

A wafer surface defect inspection method and a wafer surface defect inspection apparatus are provided. The method includes the following steps. Scanning information of a wafer is received, and the scanning information includes multiple scanning parameters. At least one reference point of the scanning information is determined, and path information is generated according to the at least one reference point and a reference value. Multiple first scanning parameters corresponding to the path information in the scanning parameters are obtained according to the path information to generate a curve chart. According to the curve chart, it is determined whether the wafer has a defect, and a defect type of the defect is determined.


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