The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Aug. 23, 2023
Globalwafers Co., Ltd., Hsinchu, TW;
Mradian Femto Sources Co., Ltd., Hsinchu City, TW;
Shang-Chi Wang, Hsinchu, TW;
Chia-Chi Tsai, Hsinchu, TW;
I-Ching Li, Hsinchu, TW;
Chien Chung Lee, Hsinchu, TW;
Bo-Kai Wang, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
mRadian Femto Sources Co., Ltd., Hsinchu City, TW;
Abstract
A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 μm to 600 μm, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.