The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Dec. 15, 2017
Globalwafers Co., Ltd., Hsinchu, TW;
Ching-Shan Lin, Hsinchu, TW;
Jian-Hsin Lu, Hsinchu, TW;
Chien-Cheng Liou, Hsinchu, TW;
I-Ching Li, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A method for producing a silicon carbide wafer includes: providing a silicon carbide wafer having an unpolished surface; in which the unpolished surface has a first crystal face and a second crystal face; polishing one face of the first crystal face and the second crystal face of the unpolished surface in a first polishing solution by using a polisher; in which the polisher includes a polishing pad and a plurality of abrasive particles fixed on the polishing pad; and polishing the other face of the first crystal face and the second crystal face of the unpolished surface in a second polishing solution by using the polisher; in which a pH value of the first polishing solution is less than or equal to 7, and a pH value of the second polishing solution is greater than or equal to 7. The present disclosure also provides a silicon carbide wafer.