Sheng-Hua Ni

Title: Innovations of Sheng-Hua Ni

Introduction

Sheng-Hua Ni is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of silicon technology, particularly in the fabrication of crystalline silicon ingots. With a total of 2 patents to his name, his work has implications for various applications in the semiconductor industry.

Latest Patents

One of Sheng-Hua Ni's latest patents is focused on a crystalline silicon ingot and the method of fabricating the same. This invention discloses a crystalline silicon ingot that includes multiple silicon crystal grains growing in a vertical direction. The ingot features a bottom section with a silicon crystal grain that has a first average crystal grain size of less than about 12 mm. Additionally, the upper portion of the ingot, located approximately 250 mm from the bottom, contains a silicon crystal grain with a second average crystal grain size greater than about 14 mm. This innovative approach enhances the quality and performance of silicon ingots used in various applications.

Career Highlights

Sheng-Hua Ni is currently associated with Sino-American Silicon Products Inc., where he continues to advance his research and development efforts. His work at this company has positioned him as a key player in the silicon manufacturing sector.

Collaborations

Sheng-Hua Ni has collaborated with notable colleagues, including Sung-Lin Hsu and Cheng-Jui Yang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

In summary, Sheng-Hua Ni is a distinguished inventor whose work in crystalline silicon technology has led to valuable patents and advancements in the field. His contributions continue to influence the semiconductor industry and inspire future innovations.