The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Sep. 02, 2018
Sino-american Silicon Products Inc., Hsinchu, TW;
Ching-Hung Weng, Hsinchu, TW;
Cheng-Jui Yang, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Yuan-Hsiao Chang, Hsinchu, TW;
Bo-Kai Wang, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Ying-Ru Shih, Hsinchu, TW;
Sung-Lin Hsu, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm·cm (Ω·cm), the slope of resistivity is 0 to −1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.