Ching-Hung Weng

Title: The Innovative Genius of Ching-Hung Weng

Introduction

Ching-Hung Weng is a renowned inventor based in Hsinchu, Taiwan, recognized for his significant contribution to the field of polysilicon technology. With a focus on innovations in crystalline materials, Weng has made strides that could impact various semiconductor applications.

Latest Patents

Weng holds a patent for an "N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer." This invention offers advancements in the characteristics of N-type polysilicon crystals, which include a specific slope of resistivity and defect area percentage. The patent details that the resistivity slopes from 0 to -1.8 Ohm·cm at a solidified fraction range of 0.25 to 0.8. Furthermore, the defect area percentage remains less than 2.5% within a solidified fraction range of 0.4 to 0.8, which is critical for improving the quality of polysilicon used in electronics.

Career Highlights

Weng's career is marked by his role at Sino-American Silicon Products Inc., where he has played a vital part in developing groundbreaking polysilicon technologies. His inventive work not only showcases his technical acumen but also demonstrates his commitment to enhancing product performance in the semiconductor industry.

Collaborations

Within Sino-American Silicon Products Inc., Weng collaborates with notable colleagues, including Cheng-Jui Yang and Yu-Min Yang. Their teamwork is likely instrumental in driving the innovation and efficiency of their research projects.

Conclusion

Ching-Hung Weng's contributions to the field of polysilicon technology and his patented inventions solidify his status as a significant figure among contemporary inventors. As innovations in this sector continue to evolve, Weng's work remains influential in shaping the future of semiconductor materials and applications.