The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Mar. 26, 2012
Wen-chieh Lan, Hsinchu, TW;
Yong-cheng Yu, Hsinchu, TW;
Wen-huai Yu, Hsinchu, TW;
Sung-lin Hsu, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Wen-Chieh Lan, Hsinchu, TW;
Yong-Cheng Yu, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Sung-Lin Hsu, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.