The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Mar. 09, 2012
Wen-huai Yu, Hsinchu, TW;
Cheng-jui Yang, Hsinchu, TW;
Yu-min Yang, Hsinchu, TW;
Kai-yuan Pai, Hsinchu, TW;
Wen-chieh Lan, Hsinchu, TW;
Chan-lu Su, Hsinchu, TW;
Yu-tsung Chiang, Hsinchu, TW;
Sung-lin Hsu, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Chung-wen Lan, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Cheng-Jui Yang, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Kai-Yuan Pai, Hsinchu, TW;
Wen-Chieh Lan, Hsinchu, TW;
Chan-Lu Su, Hsinchu, TW;
Yu-Tsung Chiang, Hsinchu, TW;
Sung-Lin Hsu, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.