Sino-american Silicon Products Inc.

National Science Council

Sino-american Sulicon Products Inc.

Sung-Lin Hsu

Wen-Ching Hsu

Wen-Huai Yu

Yu-Min Yang

Chung-Wen Lan

Cheng-Jui Yang

Wen-Chieh Lan

Yu-Tsung Chiang

Kai-Yuan Pai

Chan-Lu Su

Ming-Kung Hsiao

Ying-Ru Shih

I-Ching Li

Ching-Shan Lin

Bo-Kai Wang

Hung-Sheng Chou

Sheng-Hua Ni

Pei-Kai Huang

Jer-Liang Andrew Yeh

Tsung-Shune Chin

Jing-Yi Huang

Yuan-Hsiao Chang

Ming-Cheng Deng

Kuo-Wei Chuang

Ya-Lu Tsai

Ya-Lan Ho

Jung-Tsung Wang

Yong-Cheng Yu

Chao-Kun Hsieh

Ching-Hung Weng

Huang-Wei Lin

A method for forming an isolating layer of a crucible includes placing a round crucible sideways with a bottom surface of an inside thereof perpendicular to a horizontal plane, and then performing a plurality of spraying processes to form the isolating layer on the bottom surface and a wall surface of the round crucible. Each spraying process includes spraying a slurry on the bottom surface; using an optical positioner to set a spraying range the same as one of a plurality of partial areas divided from the wall surface; aligning one of the plurality of partial areas with the spraying range; fixing the round crucible and spraying the slurry in the spraying range; stopping the spraying; and rotating the round crucible to move another partial area to the spraying range. Then, the steps are repeated until the spraying of all the partial areas is completed.

Crucible structure and method for forming isolating layer of crucible

An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm&#xb7;cm (&#x3a9;&#xb7;cm), the slope of resistivity is 0 to &#x2212;1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.

N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

Crystalline silicon ingot and method of fabricating the same

A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles

A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom

The invention provides a crucible assembly and method of manufacturing a crystalline silicon ingot by use of such crucible assembly. The crucible assembly of the invention includes a crucible body and a fiber textile article. The fiber textile article is made of a plurality of carbon fibers, and is loaded on a bottom of the crucible body. The fiber textile article has a plurality of intrinsic pores randomly arranged.

Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assembly

A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm&#x2dc;10%/mm.

Crystalline silicon ingot including nucleation promotion layer

Method of fabricating crystalline silicon ingot including nucleation promotion layer

The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Seed used for crystalline silicon ingot casting

A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.

Method of manufacturing crystalline silicon ingot

The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

Method of manufacturing composite wafer structure

A method for preparing a barium-ferrite-coated, needle-shaped .gamma.-Fe.sub.2 O.sub.3 magnetic powder of better properties is provided. The method includes the following steps of a) letting an iron-containing solution undergo a reaction to precipitate a needle-shaped .alpha.-FeOOH phase powder, b) mixing said .alpha.-FeOOH powder into a barium-containing solution in a predetermined Fe/Ba ratio, c) filtering without washing the precipitated powder, and d) subjecting the precipitated powder to heat treatments including calcination, reduction and oxidation.

Growing community of inventors

Hsinchu, Taiwan

Sung-Lin Hsu