The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
May. 01, 2017
Sino-american Silicon Products Inc., Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Cheng-Jui Yang, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Kai-Yuan Pai, Hsinchu, TW;
Wen-Chieh Lan, Hsinchu, TW;
Chan-Lu Su, Hsinchu, TW;
Yu-Tsung Chiang, Hsinchu, TW;
Sung-Lin Hsu, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.