The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
May. 24, 2012
Chung-wen Lan, Hsinchu, TW;
Bruce Hsu, Hsinchu, TW;
Wen-huai Yu, Hsinchu, TW;
Wen-chieh Lan, Hsinchu, TW;
Yu-min Yang, Hsinchu, TW;
Kai-yuan Pai, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Hsinchu, TW;
Bruce Hsu, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Wen-Chieh Lan, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Kai-Yuan Pai, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Sino-American Silicon Products Inc., Hsinchu, TW;
Abstract
A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.