The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Oct. 12, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
Kazuo Nakajima, Hsinchu, TW;
Masami Nakanishi, Hsinchu, TW;
Yu Sheng Su, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided. In the growing step, the Si ingot single crystal is grown in silicon melt in crucible, and the growing step includes providing a low-temperature region in the Si melt and providing a silicon seed to contact the melt surface of the silicon melt to start crystal growth, and silicon single crystal grows along the melt surface of the silicon melt and toward the inside of the silicon melt. In the temperature gradient controlling step, the under-surface temperature gradient of the silicon single crystal is G, the above-surface temperature gradient of the silicon single crystal is G, Gand Gsatisfy: G/G<6. The step of controlling the temperature gradient of silicon single crystal is repeated to obtain the Si ingot single crystal.