Hsinchu, Taiwan

Masami Nakanishi

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: Globalwafers Co., Ltd., Globalwafers Co., Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masami Nakanishi. Retrieved from https://idiyas.com/inventor/masami-nakanishi-st660wk2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 85.7

Average Co-Inventor Count = 3.8

ph-index = 1


Company Filing History:


Years Active: 2023-2026

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7 patents (USPTO):Explore Patents

Title: Masami Nakanishi: Innovator in Silicon Crystal Growth

Introduction

Masami Nakanishi is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of silicon crystal growth, holding a total of six patents. His innovative methods have advanced the production of silicon ingots, which are essential in various technological applications.

Latest Patents

Nakanishi's latest patents include a method for producing silicon ingot single crystals. This method involves a silicon ingot single crystal growing step, a temperature gradient controlling step, and a continuous growing step. In the growing step, the silicon ingot single crystal is cultivated in a silicon melt within a crucible. The process includes creating a low-temperature region in the silicon melt and introducing a silicon seed to initiate crystal growth. The silicon single crystal grows along the melt surface and into the silicon melt. The temperature gradient controlling step ensures that the under-surface and above-surface temperature gradients of the silicon single crystal meet specific criteria. This meticulous control is repeated to achieve the desired silicon ingot single crystal.

Another notable patent is a method for collecting dust from a single crystal growth system. This method utilizes dry air and oxygen to facilitate the collection of dust oxide. By blowing an inert gas into the exit pipe connected to the growth system, the dust oxide is directed toward a dust collecting device. The oxygen reacts with unstable dust to form dust oxide, which is then collected efficiently.

Career Highlights

Nakanishi works at GlobalWafers Co., Ltd., a leading company in the semiconductor industry. His expertise in silicon crystal growth has positioned him as a key figure in advancing technologies related to silicon wafers. His innovative approaches have not only improved production efficiency but also enhanced the quality of silicon crystals.

Collaborations

Throughout his career, Nakanishi has collaborated with notable colleagues, including Yu-Sheng Su and Kazuo Nakajima. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Masami Nakanishi's contributions to the field of silicon crystal growth are invaluable. His innovative patents and collaborative efforts continue to shape the future of semiconductor technology. His work exemplifies the spirit of innovation that drives advancements in this critical industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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