Sino-american Silicon Products Inc.

Globalwafers Co., Ltd.

Other

National Sun Yat-sen University of Kaohsiung

Sino-american Sulicon Products Inc.

Wen-Ching Hsu

Wen-Huai Yu

Yu-Min Yang

I-Ching Li

Chung-Wen Lan

Sung-Lin Hsu

Chih-Yuan Chuang

Wen-Chieh Lan

Cheng-Jui Yang

Ying-Ru Shih

Chun-I Fan

Miin-Jang Chen

Kai-Yuan Pai

Yu-Tsung Chiang

Ming-Kung Hsiao

Jiunn-Yih Chyan

Chan-Lu Su

Chun-Hung Chen

Man-Hsuan Lin

Masami Nakanishi

Hung-Sheng Chou

Mitch M C Chou

Kuo-Wei Chuang

Suz-Hua Ho

Yu Sheng Su

Kazuo Nakajima

Hsing-Pang Wang

Sung Lin Hsu

Chien-Jen Sun

Kun-Lin Yang

Jer-Liang Andrew Yeh

Jia-Zhe Liu

Ching-Shan Lin

Manhsuan Lin

Bo-Kai Wang

Bruce Hsu

Chih-Chieh Yu

Yen Lun Huang

Bo-Wen Lin

Huang Wei Lin

Pei-Kai Huang

Ya-Lan Ho

Jung-Tsung Wang

Che Ming Liu

Yuan Hsiao Chang

Lu-Chung Chuang

Chi-Tse Lee

Jian-Jhih Li

Sheng-Hua Ni

Ya-Lu Tsai

Cheng-Hung Wei

Chun-Yen Peng

Hao-Chung Kuo

Te-Hao Lee

Chia-Chi Tsai

Jing-Yi Huang

Hung-Chi Chien

Yen-Lun Huang

Shang-Chi Wang

Shuo-Hung Hsu

Yao-Chung Chang

Yuan-Hao Chang

Chuan-Wei Tsou

Chia-Wen Ko

Ching-Yen Peng

Bo-Hsiang Tseng

Yi-Shan Hsieh

Lu-Sheng Hong

Szu-Hua Ho

Jih-Jen Wu

Ming-Shien Hu

Yu-Ting Wong

Huan-Yu Shih

Ray-Ming Lin

Chiou-Mei Luo

Che-Ming Liu

Chih Chin Liang

Yong-Cheng Yu

Kimsam Hsieh

Chao-Kun Hsieh

Hsin-Jui Chen

A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided. In the growing step, the Si ingot single crystal is grown in silicon melt in crucible, and the growing step includes providing a low-temperature region in the Si melt and providing a silicon seed to contact the melt surface of the silicon melt to start crystal growth, and silicon single crystal grows along the melt surface of the silicon melt and toward the inside of the silicon melt. In the temperature gradient controlling step, the under-surface temperature gradient of the silicon single crystal is G, the above-surface temperature gradient of the silicon single crystal is G, Gand Gsatisfy: G/G<6. The step of controlling the temperature gradient of silicon single crystal is repeated to obtain the Si ingot single crystal.

Method for producing silicon ingot single crystal

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Buffer layer structure to improve gan semiconductors

A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

Apparatus for producing Si ingot single crystal

Method for producing Si ingot single crystal, Si ingot single crystal, and apparatus thereof

A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.

Semiconductor device

A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Material analysis method

A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

Mono-crystalline silicon growth apparatus

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x&#x2264;1 and y&#x2265;0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Buffer layer structure to improve GaN semiconductors

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 &#x3bc;m and less than 200 &#x3bc;m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90&#xb0; is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 &#x3bc;m and 800 &#x3bc;m.

Method of manufacturing epitaxy substrate

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (&#x212b;) and 500 angstroms.

Epitaxy substrate and method of manufacturing the same

A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

Mono-crystalline silicon growth method

A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible. The heat adjusting module includes a diversion tube, a plurality of heat preservation sheets, and a hard shaft. The diversion tube includes a tube body and a carrying body connected to the tube body. The heat preservation sheets are sleeved around the tube body and are stacked and disposed on the carrying body. The hard shaft passes through the tube body and does not rotate. The hard shaft includes a water flow channel disposed therein and a clamping portion configured to clamp a seed crystal. Therefore, a fluid injected into the water flow channel takes away the heat near the clamping portion. A heat adjusting module and a hard shaft of the mono-crystalline silicon growth apparatus are provided.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90&#xb0; is between the bevel of the device substrate and the handle substrate.

A polycrystalline silicon wafer is provided. The polycrystalline silicon wafer, includes a plurality of silicon grains, wherein the carbon content of the polycrystalline silicon wafer is greater than 4 ppma, and the resistivity of the polycrystalline silicon wafer is greater than or equal to 1.55 &#x3a9;-cm.

Polycrystalline silicon column and polycrystalline silicon wafer

A bonded substrate for epitaxial growth and a method for forming the same are disclosed. The method includes steps of providing a first substrate, which has a first dopant concentration; providing a second substrate, which has a second dopant concentration, wherein the second dopant concentration is lower than the first dopant concentration; directly bonding a first surface of the first substrate with a second surface of the second substrate to form a bonded substrate; annealing the bonded substrate to form a high impedance layer in the bonded substrate; and removing part of the second substrate to expose the high impedance layer depending on the requirements whereby, the bonded substrate formed by the method could have a heavily doped substrate which includes a stronger strength and the impedance layer formed thereon, which could effectively increase the substrate strength, reduce the leakage current, and sustains a higher breakdown voltage.

Bonded substrate for epitaxial growth and method of forming the same

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Hsinchu, Taiwan

Wen-Ching Hsu