The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Nov. 17, 2020
Globalwafers Co., Ltd., Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided. The nucleation layer is formed on the substrate; the buffer layer is formed on the nucleation layer; the channel layer is formed on the buffer layer; the barrier layer is formed on the channel layer; and the P-type aluminum indium gallium nitride layer is formed on the barrier layer. The material of the P-type aluminum indium gallium nitride layer is AlInGaN with a P-type dopant, in which the contents of Al, In and Ga all change stepped-periodically or stepped-periodical-gradually in the thickness direction, and the doping concentration of the P-type dopant changes stepped-periodically or stepped-periodical-gradually in the thickness direction.