The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Mar. 09, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is AlInN, where 0≤x≤1. The x value consists of four sections of variation along the thickness direction, in which a first fixed region has a maximum value, a first gradient region gradually changes from the maximum value to a minimum value, a second fixed region has the minimum value, and a second gradient region gradually changes from the minimum value to the maximum value. An absolute value of a gradient slope of the first and second gradient regions is 0.1%/nm to 50%/nm. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.