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For the Inventor, By the Inventor

Jiangsu, China

Yan Gu

USPTO Granted Patents = 14 

 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Jiangsu, CN (2015 - 2020)
  • Wuxi New District, CN (2021 - 2022)
  • Wuxi, CN (2022 - 2024)

Company Filing History:

goldMedal13 out of 139 
 
Csmc Technologies Fab2 Co., Ltd.
 patents
silverMedal1 out of 370 
 
Southeast University
 patents
bronzeMedal1 out of 10 
 
Chinese Academy of Forestry
 patents
where one patent can have more than one assignee

Years Active: 2015-2024

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):
1. 12119395 - Insulated gate bipolar transistor (2024-10-15),
2. 12015025 - Transient voltage suppression device and manufacturing method therefor (2024-06-18),
3. 11887979 - Transient voltage suppression device and manufacturing method therefor (2024-01-30),
4. 11430780 - TVS device and manufacturing method therefor (2022-08-30),
5. 11387349 - Trench gate depletion mode VDMOS device and method for manufacturing the same (2022-07-12),
6. 11276690 - Integrated semiconductor device and electronic apparatus (2022-03-15),
7. 11257720 - Manufacturing method for semiconductor device and integrated semiconductor device (2022-02-22),
8. 11233045 - Transient voltage suppression device and manufacturing method therefor (2022-01-25),
9. 11171223 - Method for manufacturing semiconductor device and integrated semiconductor device (2021-11-09),
10. 10879385 - Device integrated with junction field effect transistor and method for manufacturing the same (2020-12-29),
11. 10872823 - Device integrated with junction field effect transistor and method for manufacturing the same (2020-12-22),
12. 10867995 - Device integrated with depletion-mode junction fielf-effect transistor and method for manufacturing the same (2020-12-15),
13. 10290726 - Lateral insulated gate bipolar transistor (2019-05-14),
14. 8946469 - Process for preparing isopimaric acid (2015-02-03),

Title: Biography of Yan Gu

Introduction: Yan Gu is a prominent inventor based in Jiangsu, China, known for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, he has made remarkable advancements in the design and manufacturing of electronic components.

Latest Patents: Among his latest innovations is the insulated gate bipolar transistor, which features a unique structure comprising an anode second conductivity-type region and an anode first conductivity-type region. This design enhances the performance of electronic devices by optimizing the dopant concentrations in various regions. Another notable patent is for a transient voltage suppression device, which includes a substrate and multiple conductive type well regions, effectively isolating different wells to improve device reliability.

Career Highlights: Yan Gu has worked with esteemed organizations such as CSMC Technologies Fab2 Co., Ltd. and Southeast University. His experience in these institutions has allowed him to refine his skills and contribute to cutting-edge research in semiconductor technology.

Collaborations: Throughout his career, Yan has collaborated with talented individuals, including Sen Zhang and Shikang Cheng. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion: Yan Gu's work exemplifies the spirit of innovation in the semiconductor industry. His patents not only reflect his expertise but also contribute to the advancement of technology, making a lasting impact on the field.

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