The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Nov. 01, 2019
Applicant:

Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;

Inventors:

Shikang Cheng, Wuxi, CN;

Yan Gu, Wuxi, CN;

Sen Zhang, Wuxi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/266 (2006.01); H01L 29/06 (2006.01); H01L 29/74 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/266 (2013.01); H01L 29/0611 (2013.01); H01L 29/7412 (2013.01); H01L 29/866 (2013.01);
Abstract

A TVS device and a manufacturing method therefor. The TVS device comprises: a first doping type semiconductor substrate (); a second doping type deep well I (), a second doping type deep well II (), and a first doping type deep well () provided on the semiconductor substrate; a second doping type heavily doped region I () provided in the second doping type deep well I (); a first doping type well region () and a first doping type heavily doped region I () provided in the second doping type deep well II (); a first doping type heavily doped region II () and a second doping type heavily doped region II () provided in the first doping type deep well (); a second doping type heavily doped region III () located in the first doping type well region () and the second doping type deep well II (); and a first doping type doped region () provided in the first doping type well region ().


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