The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jan. 28, 2016
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A lateral insulated gate bipolar transistor, comprising: a substrate (), having a first conductivity type; an insulating layer (), formed on the substrate (); an epitaxial layer (), having a second conductivity type and formed on the insulating layer (); a field oxide layer (), formed on the epitaxial layer (); a first well (), having the first conductivity type; a plurality of gate trench structures (); second source doped regions (), having the second conductivity type; first source doped regions (), having the first conductivity type; a second well (), having the second conductivity type; a first drain doped region (), having the first conductivity type and formed on a surface layer of the second well (); gate lead-out ends (); a source lead-out end (); a drain lead-out end ().