The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Aug. 26, 2020
Southeast University, Jiangsu, CN;
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Long Zhang, Wuxi, CN;
Jie Ma, Wuxi, CN;
Yan Gu, Wuxi, CN;
Sen Zhang, Wuxi, CN;
Jing Zhu, Wuxi, CN;
Jinli Gong, Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Longxing Shi, Wuxi, CN;
SOUTHEAST UNIVERSITY, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.