Jinli Gong

Title: Jinli Gong: Innovator in Insulated Gate Bipolar Transistors

Introduction

Jinli Gong is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, particularly with his work on insulated gate bipolar transistors. His innovative approach has led to the development of a unique patent that enhances the efficiency and performance of these devices.

Latest Patents

Jinli Gong holds a patent for an insulated gate bipolar transistor. This invention comprises an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region. The anode first conductivity-type region includes a first region and a second region, while the anode second conductivity-type region consists of a third region and a fourth region. The dopant concentration of the first region is less than that of the second region, and similarly, the dopant concentration of the third region is less than that of the fourth region. The third region is positioned between the fourth region and a body region, with the first region located below the fourth region and the second region situated below the third region, between the first region and the body region.

Career Highlights

Throughout his career, Jinli Gong has worked with prominent institutions, including Southeast University and CSMC Technologies Fab2 Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Jinli Gong has collaborated with several talented individuals in his field, including Long Zhang and Jie Ma. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Jinli Gong's contributions to the field of insulated gate bipolar transistors exemplify his dedication to innovation and technology. His patent and collaborations highlight his role as a significant figure in semiconductor advancements.