Southeast University

Csmc Technologies Fab2 Co., Ltd.

Jinli Gong

Longxing Shi

Weifeng Sun

Sen Zhang

Long Zhang

Yan Gu

Jie Ma

Jing Zhu

An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.

Insulated gate bipolar transistor

Growing community of inventors

Wuxi, China

Jinli Gong