The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Sep. 04, 2019
Applicant:

Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;

Inventors:

Shikang Cheng, Wuxi, CN;

Yan Gu, Wuxi, CN;

Sen Zhang, Wuxi, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0296 (2013.01); H01L 29/0611 (2013.01); H01L 29/66106 (2013.01); H01L 29/866 (2013.01);
Abstract

A transient voltage suppression device includes a substrate; a first conductivity type well region disposed in the substrate and comprising a first well and a second well; a third well disposed on the substrate, a bottom part of the third well extending to the substrate; a fourth well disposed in the first well; a first doped region disposed in the second well; a second doped region disposed in the third well; a third doped region disposed in the fourth well; a fourth doped region disposed in the fourth well; a fifth doped region extending from inside of the fourth well to the outside of the fourth well, a portion located outside the fourth well being located in the first well; a sixth doped region disposed in the first well; a seventh doped region disposed below the fifth doped region and in the first well.


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