The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Aug. 15, 2019
Applicant:

Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;

Inventors:

Shikang Cheng, Wuxi, CN;

Yan Gu, Wuxi, CN;

Sen Zhang, Wuxi, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 29/0692 (2013.01); H01L 29/66106 (2013.01); H01L 29/866 (2013.01);
Abstract

A transient voltage suppression device includes: a substrate; a first conductive type well region including a first well and a second well; a second conductive type well region including a third well and a fourth well, the third well being disposed between the first well and the second well so as to isolate the first well and the second well, and the second well being disposed between the third well and the fourth well; a zener diode active region; a first doped region, provided in the first well; a second doped region, provided in the first well; a third doped region, provided in the second well; a fourth doped region, provided in the second well; a fifth doped region, provided in the zener diode active region; and a sixth doped region, provided in the zener diode active region.


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