The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Nov. 21, 2018
Csmc Technologies Fab2 Co., Ltd., Suzhou, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A manufacturing method for a semiconductor device, and an integrated semiconductor device. The manufacturing method comprises: on a semiconductor substrate, forming an epitaxial layer having a first region, a second region, and a third region; forming at least one groove in the third region, forming at least two second doping deep traps in the first region, and forming at least two second doping deep traps in the second region; forming a first dielectric island between the second doping deep traps and forming a second dielectric island on the second doping deep traps; forming a first doping groove at both sides of the first dielectric island in the first region; forming a gate structure on the first dielectric island; forming an isolated first doping source region using the second dielectric island as a mask.