William Joseph Gallagher

This inventor holds 79 USPTO granted patents and 9 published patent applications, primarily in Magnetic Memory Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd., Massachusetts Institute of Technology. Active years: 1989-2025.

USPTO Granted Patents = 79 (Patent Applications = 9)

% Patents Active = 62.0

Average Co-Inventor Count = 3.6

ph-index = 16

Forward Citations = 1,689(Granted Patents)

Forward Citations (Not Self Cited) = 1,651(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Dobbs Ferry, NY (US) (1993)
Arsdely, NY (US) (2016 - 2017)
Ardsley, NY (US) (1989 - 2023)
Hsinchu, TW (2017 - 2023)

Company Filing History:

65 out of 166,209

International Business Machines Corporation

patents

14 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 8,573

Massachusetts Institute of Technology

patents

where one patent can have more than one assignee

Years Active: 1989-2025

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Areas of Expertise:

SOT-MRAM

Magnetic Random Access Memory

Soft Magnetic Materials

Electroless Deposition

Magnetic Inductors

Thermally Stable Materials

Group III Nitride

Semiconductor Devices

Miniaturized Power Converters

Current Collapse Control

Laminated Structures

Memory Device Algorithms

79 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12322428 - SOT-MRAM with shared selector (2025-06-03),

2. 12240753 - Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam (2025-03-04),

3. 11723218 - Semiconductor device and method for forming the same (2023-08-08),

4. 11699474 - SOT-MRAM with shared selector (2023-07-11),

5. 11522009 - MRAM device having self-aligned shunting layer (2022-12-06),

6. 11502241 - Magnetic device and magnetic random access memory (2022-11-15),

7. 11404633 - Method for forming MTJS with lithography-variation independent critical dimension (2022-08-02),

8. 11289143 - SOT-MRAM with shared selector (2022-03-29),

9. 11174159 - Micro-electromechanical device having a soft magnetic material electrolessly deposited on a metal layer (2021-11-16),

10. 11152144 - Electrolessly formed high resistivity magnetic materials (2021-10-19),

11. 11107878 - High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors (2021-08-31),

12. 11081153 - Magnetic memory device with balancing synthetic anti-ferromagnetic layer (2021-08-03),

13. 11075336 - Magnetic random access memory and manufacturing method thereof (2021-07-27),

14. 11031544 - Memory device with superparamagnetic layer (2021-06-08),

15. 10971576 - High resistivity soft magnetic material for miniaturized power converter (2021-04-06),

Title: The Legacy of William Joseph Gallagher

Introduction: William Joseph Gallagher, a distinguished inventor hailing from Ardsley, NY, has made significant contributions to the field of innovation with his groundbreaking creations.

Latest Patents: Gallagher's most recent patents include advancements in renewable energy technology, medical devices, and sustainable materials, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Gallagher has established himself as a visionary inventor with a keen eye for identifying gaps in various industries and developing solutions that push the boundaries of what is possible.

Collaborations: Throughout his career, Gallagher has collaborated with leading research institutions, universities, and companies to bring his inventions to life, fostering a culture of innovation and excellence in every project he undertakes.

Conclusion: William Joseph Gallagher's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor, leaving an indelible mark on the world of technology and beyond.