The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jul. 09, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Gaurav Gupta, Hsinchu, TW;
William J. Gallagher, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
In some embodiments, the present application provides a memory device. The memory device includes a ferromagnetic free layer; a non-magnetic barrier layer overlying the ferromagnetic free layer; and a superparamagnetic free layer overlying the non-magnetic barrier layer.
Gupta, Gaurav. (2021). Memory device with superparamagnetic layer (U.S. Patent No. 11031544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031544
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile