Location History:
- Delhi, IN (2021 - 2022)
- Hsinchu, TW (2020 - 2024)
Company Filing History:
9 out of 40,850 
1 out of 6,930 
Years Active: 2020-2025
Title: Gaurav Gupta: Innovator in Magnetic Tunnel Junction Technology
Introduction
Gaurav Gupta is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of magnetic tunnel junction (MTJ) technology, holding a total of 10 patents. His work focuses on enhancing the performance and reliability of memory devices.
Latest Patents
Among his latest patents is the invention titled "Current steering in reading magnetic tunnel junction." This patent discloses MTJ read circuits that include a current steering element coupled to the read path. At a first node of the current steering element, a proportionally larger current is maintained to meet the requirements of reliable voltage or current sensing. At a second node, a proportionally smaller current is maintained, which passes through the MTJ structure. The current at the first node is proportional to the current at the second node, allowing for effective sensing based on the MTJ resistance value. Another notable patent is the "Read circuit for magnetic tunnel junction (MTJ) memory." This invention provides a memory device that includes a memory cell array comprising a plurality of MTJ memory cells arranged in columns and rows, along with a read bias circuit configured to provide a reading bias for the MTJ memory cells.
Career Highlights
Gaurav Gupta has worked with leading companies in the technology sector, including Taiwan Semiconductor Manufacturing Company Ltd. and Adobe, Inc. His experience in these organizations has contributed to his expertise in developing innovative solutions in the field of memory technology.
Collaborations
He has collaborated with notable professionals such as Zhiqiang Wu and Yih Wang, further enhancing his contributions to the industry.
Conclusion
Gaurav Gupta's work in magnetic tunnel junction technology showcases his innovative spirit and dedication to advancing memory device performance. His patents reflect a deep understanding of the complexities involved in this field, making him a significant figure in the world of technology.