The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jul. 03, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Gaurav Gupta, Hsinchu, TW;
Zhiqiang Wu, Chubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present application provides a memory device. The memory device includes a first current mirror transistor, a first pull-up read-enable transistor, an MTJ memory cell, a first pull-down read-enable transistor, and a first non-linear resistance device. The MTJ memory cell includes an MTJ memory element and a first access transistor. The first non-linear resistance device is coupled in series and between the first pull-up read-enable transistor and the first current mirror transistor. The first non-linear resistance device is configured to provide a first resistance when conducting a first current and a second resistance greater than the first resistance when conducting a second current smaller than the first current.