The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Dec. 03, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Gaurav Gupta, Hsinchu, TW;

Zhiqiang Wu, Chubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); G11C 11/1657 (2013.01); H01L 43/10 (2013.01);
Abstract

In some embodiments, the present application provides a memory device. The memory device includes a first read bias transistor, a first pull-up read-enable transistor, an MTJ memory cell, a first pull-down read-enable transistor, and a first non-linear resistance device. The first non-linear resistance device is coupled in series and between the first pull-up read-enable transistor and the first read bias transistor. The first non-linear resistance device is configured to provide a first resistance when applied a first voltage and a second resistance greater than the first resistance when applied a second voltage smaller than the first voltage.


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