The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 22, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
MingYuan Song, Hsinchu, TW;
Shy-Jay Lin, Jhudong Township, TW;
Chien-Min Lee, Hsinchu, TW;
William Joseph Gallagher, Ardsley, NY (US);
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G01R 33/093 (2013.01); G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02);
Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.