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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Hsing Hsieh

USPTO Granted Patents = 75 

Average Co-Inventor Count = 5.6

ph-index = 10

Forward Citations = 671(Granted Patents)

Forward Citations (Not Self Cited) = 653(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Taichung, TW (2013 - 2016)
  • Hsinchu County, TW (2018)
  • Hsin-Chu, TW (2012 - 2024)

Company Filing History:

goldMedal75 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2012-2025

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75 patents (USPTO):
1. 12396240 - Source/drain silicide for multigate device performance and method of fabricating thereof (2025-08-19),
2. 12361199 - Integrated circuit layout generation method (2025-07-15),
3. 12349393 - Semiconductor device transistor having multiple channels with different widths and materials (2025-07-01),
4. 12349380 - Gate all around transistor device and fabrication methods thereof (2025-07-01),
5. 12317526 - Multi-gate devices and fabricating the same with etch rate modulation (2025-05-27),
6. 12300754 - Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof (2025-05-13),
7. 12300749 - Source/drain features with improved strain properties (2025-05-13),
8. 12272043 - Semiconductor topography simulation of non-removal type processes (2025-04-08),
9. 12237414 - Source/drain features with improved strain properties (2025-02-25),
10. 12230712 - Dielectric fin structure (2025-02-18),
11. 12230681 - Semiconductor memory devices with different doping types (2025-02-18),
12. 12218214 - Source/drain silicide for multigate device performance and method of fabricating thereof (2025-02-04),
13. 12125848 - Semiconductor device structure incorporating air gap (2024-10-22),
14. 12118707 - System and method for semiconductor topography simulations (2024-10-15),
15. 12078551 - Complementary bipolar junction transistor (2024-09-03),

Title: Wen-Hsing Hsieh: Pioneering Innovations through Passion and Dedication

Introduction:

Wen-Hsing Hsieh, a visionary inventor based in Hsinchu, Taiwan, is a true pioneer in the world of inventions. With a staggering number of 58 patents to his name, his passion for innovation and dedication to pushing the boundaries of technology have truly set him apart as a transformative figure in the field.

Latest Patents:

Hsieh's latest patents showcase his ingenuity and technical expertise. The first patent titled "Multi-gate devices and fabricating the same with etch rate modulation" introduces a semiconductor device with unique features aimed at enhancing performance. The second patent, "Semiconductor device having nanosheet transistor and methods of fabrication thereof," demonstrates his commitment to cutting-edge semiconductor technologies.

Career Highlights:

Wen-Hsing Hsieh's illustrious career includes his significant contributions as a key figure at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), a leading player in the semiconductor industry. His role at TSMC has been pivotal in driving innovation and shaping the future of semiconductor technology.

Collaborations:

Throughout his career, Hsieh has collaborated closely with esteemed colleagues such as Jon-Hsu Ho and Zhiqiang Wu. Together, they have worked on groundbreaking projects that have further solidified his reputation as a forward-thinker and innovator.

Conclusion:

In conclusion, Wen-Hsing Hsieh's unwavering commitment to innovation and his remarkable track record of patents underscore his status as a true trailblazer in the field of inventions. His legacy will continue to inspire generations of inventors and shape the future of technology for years to come.

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