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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Hsing Hsieh

This inventor holds 80 USPTO granted patents and 25 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Hsing Hsieh. Retrieved from https://idiyas.com/inventor/wen-hsing-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 80 

% Patents Active = 93.8

Average Co-Inventor Count = 5.6

ph-index = 10

Forward Citations = 727(Granted Patents)

Forward Citations (Not Self Cited) = 656(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taichung, TW (2013 - 2016)
  • Hsinchu County, TW (2018)
  • Hsin-Chu, TW (2012 - 2024)

Company Filing History:

goldMedal79 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2012-2026

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Areas of Expertise:
Multigate Devices
Fabrication Methods
Integrated Circuit Layout
Transistor Structures
Dielectric Fin Structure
Strain Properties
Stacked Segments
Air Gap Integration
Semiconductor Memory
Threshold Voltage Adjustment
Nanosheet Transistor
Topography Simulation
80 patents (USPTO):Explore Patents
1. 12762684 - System and method for semiconductor topography simulations (2026-10-13),
2. 12757436 - High voltage device structure and methods of forming the same (2026-10-06),
3. 12684812 - Methods for fabricating semiconductor device having nanostructure transistor with cap layer (2026-07-14),
4. 12666586 - Semiconductor device with gate-cut structure and fabrication methods thereof (2026-06-23),
5. 12568640 - Multi-gate devices with multi-layer inner spacers and fabrication methods thereof (2026-03-03),
6. 12396240 - Source/drain silicide for multigate device performance and method of fabricating thereof (2025-08-19),
7. 12361199 - Integrated circuit layout generation method (2025-07-15),
8. 12349393 - Semiconductor device transistor having multiple channels with different widths and materials (2025-07-01),
9. 12349380 - Gate all around transistor device and fabrication methods thereof (2025-07-01),
10. 12317526 - Multi-gate devices and fabricating the same with etch rate modulation (2025-05-27),
11. 12300754 - Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof (2025-05-13),
12. 12300749 - Source/drain features with improved strain properties (2025-05-13),
13. 12272043 - Semiconductor topography simulation of non-removal type processes (2025-04-08),
14. 12237414 - Source/drain features with improved strain properties (2025-02-25),
15. 12230712 - Dielectric fin structure (2025-02-18),

Title: Wen-Hsing Hsieh: Pioneering Innovations through Passion and Dedication

Introduction:

Wen-Hsing Hsieh, a visionary inventor based in Hsinchu, Taiwan, is a true pioneer in the world of inventions. With a staggering number of 58 patents to his name, his passion for innovation and dedication to pushing the boundaries of technology have truly set him apart as a transformative figure in the field.

Latest Patents:

Hsieh's latest patents showcase his ingenuity and technical expertise. The first patent titled "Multi-gate devices and fabricating the same with etch rate modulation" introduces a semiconductor device with unique features aimed at enhancing performance. The second patent, "Semiconductor device having nanosheet transistor and methods of fabrication thereof," demonstrates his commitment to cutting-edge semiconductor technologies.

Career Highlights:

Wen-Hsing Hsieh's illustrious career includes his significant contributions as a key figure at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), a leading player in the semiconductor industry. His role at TSMC has been pivotal in driving innovation and shaping the future of semiconductor technology.

Collaborations:

Throughout his career, Hsieh has collaborated closely with esteemed colleagues such as Jon-Hsu Ho and Zhiqiang Wu. Together, they have worked on groundbreaking projects that have further solidified his reputation as a forward-thinker and innovator.

Conclusion:

In conclusion, Wen-Hsing Hsieh's unwavering commitment to innovation and his remarkable track record of patents underscore his status as a true trailblazer in the field of inventions. His legacy will continue to inspire generations of inventors and shape the future of technology for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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