The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jan. 17, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Ching Wang, Kinmen County, TW;
Chia-Ying Su, Hsinchu, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chung-Wei Wu, Hsin-Chu County, TW;
Zhiqiang Wu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure includes a semiconductor device. The semiconductor device includes first suspended nanostructures vertically stacked over one another and disposed on a substrate, a first gate stack engaging the first suspended nanostructures, a first gate spacer disposed on sidewalls of the first gate stack, second suspended nanostructures vertically stacked over one another and disposed on the substrate, a second gate stack engaging the second suspended nanostructures, and a second gate spacer disposed on sidewalls of the second gate stack. A middle portion of the first suspended nanostructures has a first thickness measured in a direction perpendicular to a top surface of the substrate. A middle portion of the second suspended nanostructures has a second thickness measured in the direction. The second thickness is smaller than the first thickness.