Wei-Kung Tsai

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Kung Tsai. Retrieved from https://idiyas.com/inventor/wei-kung-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 76.5

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 21(Granted Patents)

Location History:

Ping-Tung, TW (2005)
Hsinchu, TW (2021)
Tainan, TW (2015 - 2022)

Company Filing History:

17 out of 43,553

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2005-2022

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Areas of Expertise:

Integrated Circuit

SOI Substrate

RF Devices

Trap Layer Stacking

Carrier-Trapping Layers

Silicon-On-Insulator

Substrate Fabrication

Deep Trench Technology

Dual Damascene

Semiconductor Structure

Floating Spacer

Manufacturing Process

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11264378 - Integrated circuit (2022-03-01),

2. 11158534 - SOI substrate (2021-10-26),

3. 11121100 - Trap layer substrate stacking technique to improve performance for RF devices (2021-09-14),

4. 11121098 - Trap layer substrate stacking technique to improve performance for RF devices (2021-09-14),

5. 11063117 - Semiconductor device structure having carrier-trapping layers with different grain sizes (2021-07-13),

6. 10515949 - Integrated circuit and manufacturing method thereof (2019-12-24),

7. 10304723 - Process to form SOI substrate (2019-05-28),

8. 10090327 - Semiconductor device and method for forming the same (2018-10-02),

9. 9799557 - Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrate (2017-10-24),

10. 9761546 - Trap layer substrate stacking technique to improve performance for RF devices (2017-09-12),

11. 9711521 - Substrate fabrication method to improve RF (radio frequency) device performance (2017-07-18),

12. 9589831 - Mechanisms for forming radio frequency (RF) area of integrated circuit structure (2017-03-07),

13. 9343352 - Integrated circuit using deep trench through silicon (DTS) (2016-05-17),

14. 9230988 - Mechanisms for forming radio frequency (RF) area of integrated circuit structure (2016-01-05),

15. 9048287 - Mechanisms for forming semiconductor device structure with floating spacer (2015-06-02),

Title: Innovations of Wei-Kung Tsai

Introduction

Wei-Kung Tsai is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of integrated circuits and semiconductor technology. With a total of 17 patents to his name, Tsai has established himself as a key figure in the industry.

Latest Patents

Among his latest patents, one notable invention is an integrated circuit that includes a dielectric layer, an interlayer metal pad, and two capacitors. The first capacitor features a bottom electrode in contact with the interlayer metal pad, while the second capacitor is designed with a bottom electrode over the dielectric layer. Another significant patent involves a silicon on insulator (SOI) substrate, which consists of a dielectric layer aligned with a first substrate and an active layer covering a portion of the dielectric layer.

Career Highlights

Wei-Kung Tsai works at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing technologies that are crucial for modern electronics. Tsai's innovative designs and patents have contributed to the efficiency and performance of integrated circuits.

Collaborations

Some of his notable coworkers include Kuan-Chi Tsai and Kuo-Yu Cheng. Their collaborative efforts have further enhanced the research and development initiatives within their company.

Conclusion

Wei-Kung Tsai's contributions to the field of semiconductor technology through his patents and innovations have made a lasting impact. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]