The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Dec. 20, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shao-Yu Chen, Tainan, TW;
Chih-Ping Chao, Hsinchu, TW;
Chun-Hung Chen, Hsinchu County, TW;
Chung-Long Chang, Hsinchu, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Wei-Kung Tsai, Tainan, TW;
Hsiang-Chi Chen, Taichung, TW;
Ching-Chung Hsu, Taichung, TW;
Cheng-Chang Hsu, Hsinchu County, TW;
Yi-Sin Wang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.