The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
May. 07, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Hung Cheng, Tainan, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Ming-Che Yang, Hsinchu, TW;
Wei-Kung Tsai, Tainan, TW;
Yong-En Syu, Tainan, TW;
Yeur-Luen Tu, Taichung, TW;
Chris Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a silicon on insulator (SOI) substrate. The SOI substrate includes a dielectric layer disposed over a first substrate. The dielectric layer has an outside edge aligned with an outside edge of the first substrate. An active layer covers a first annular portion of an upper surface of the dielectric layer. The upper surface of the dielectric layer has a second annular portion that surrounds the first annular portion and extends to the outside edge of the dielectric layer. The second annular portion is uncovered by the active layer.