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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090327 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Jan. 17, 2014

Semiconductor device and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Yu Cheng, Tainan, TW;

Keng-Yu Chen, Tainan, TW;

Wei-Kung Tsai, Tainan, TW;

Kuan-Chi Tsai, Kaohsiung, TW;

Tsung-Yu Yang, Zhubei, TW;

Chung-Long Chang, Dou-Liu, TW;

Chun-Hung Chen, Xinpu Township, Hsinchu County, TW;

Chih-Ping Chao, Juhdong Town, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Matthew Reames

Assistant Examiner:

John Bodnar

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 23/66 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 21/84 (2006.01); H01L 21/763 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/28194 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/763 (2013.01); H01L 21/7624 (2013.01); H01L 21/76264 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 28/20 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/5228 (2013.01); H01L 27/0629 (2013.01); H01L 2223/6672 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a buried oxide layer formed over the substrate. An interface layer is formed between the substrate and the buried oxide layer. The semiconductor device structure also includes a silicon layer formed over the buried oxide layer; and a polysilicon layer formed over the substrate and in a deep trench. The polysilicon layer extends through the silicon layer, the buried oxide layer and the interface layer.

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