The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Feb. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Hung Cheng, Tainan, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Ming-Che Yang, Hsinchu, TW;
Wei-Kung Tsai, Tainan, TW;
Yong-En Syu, Tainan, TW;
Yeur-Luen Tu, Taichung, TW;
Chris Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming an SOI substrate. The method may be performed by epitaxially forming a silicon-germanium (SiGe) layer over a sacrificial substrate and epitaxially forming a first active layer on the SiGe layer. The first active layer has a composition different than the SiGe layer. The sacrificial substrate and is flipped and the first active layer is bonded to an upper surface of a dielectric layer formed over a first substrate. The sacrificial substrate and the SiGe layer are removed and the first active layer is etched to define outermost sidewalls and to expose an outside edge of an upper surface of the dielectric layer. A contiguous active layer is formed by epitaxially forming a second active layer on the first active layer. The first active layer and the second active layer have a substantially same composition.