The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jan. 22, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 23/58 (2006.01); H01L 21/311 (2006.01); H01L 21/84 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/31144 (2013.01); H01L 23/585 (2013.01); H01L 27/0248 (2013.01); H01L 29/0607 (2013.01); H01L 21/743 (2013.01); H01L 21/76816 (2013.01); H01L 21/84 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/14 (2013.01);
Abstract
In accordance with some embodiments, a semiconductor device is provided. The semiconductor device structure includes a substrate, and the substrate has a device region and an edge region. The semiconductor device structure also includes a silicon layer formed on the substrate and a transistor formed on the silicon layer. The transistor is formed at the device region of the substrate. The semiconductor device structure further includes a metal ring formed in the silicon layer. The metal ring is formed at the edge region of the substrate, and the transistor is surrounded by the metal ring.